Analytic Solution for the Ground State Energy of the Extensive Many-Body Problem

A closed form expression for the ground state energy density of the general extensive many-body problem is given in terms of the Lanczos tri-diagonal form of the Hamiltonian. Given the general expressions of the diagonal and off-diagonal elements of the Hamiltonian Lanczos matrix, $\alpha_n(N)$ and $\beta_n(N)$, asymptotic forms $\alpha(z)$ and $\beta(z)$ can be defined in terms of a new parameter $z\equiv n/N$ ($n$ is the Lanczos iteration and $N$ is the size of the system). By application of theorems on the zeros of orthogonal polynomials we find the ground-state energy density in the bulk limit to be given in general by ${\cal E}_0 = {\rm inf}\,\left[\alpha(z) - 2\,\beta(z)\right]$.Comment: 10 pages REVTex3.0, 3 PS figure

Sensing of Fluctuating Nanoscale Magnetic Fields Using NV Centres in Diamond

New magnetometry techniques based on Nitrogen-Vacancy (NV) defects in diamond allow for the imaging of static (DC) and oscillatory (AC) nanoscopic magnetic systems. However, these techniques require accurate knowledge and control of the sample dynamics, and are thus limited in their ability to image fields arising from rapidly fluctuating (FC) environments. We show here that FC fields place restrictions on the DC field sensitivity of an NV qubit magnetometer, and that by probing the dephasing rate of the qubit in a magnetic FC environment, we are able to measure fluctuation rates and RMS field strengths that would be otherwise inaccessible with the use of DC and AC magnetometry techniques. FC sensitivities are shown to be comparable to those of AC fields, whilst requiring no additional experimental overheads or control over the sample.Comment: 5 pages, 4 figure

Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture

We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also calculate the contact hyperfine interaction between the donor nucleus and electron as a function of the varying experimental conditions. Donor separation, depth of the P nuclei below the silicon oxide layer and J-gate voltage become decisive factors in determining the strength of both the exchange coupling and the hyperfine interaction - both crucial components for qubit operations in the Kane quantum computer. These calculations were performed using an anisotropic effective-mass Hamiltonian approach. The behaviour of the donor exchange coupling as a function of the device parameters varied provides relevant information for the experimental design of these devices.Comment: 15 pages, 15 figures. Accepted for Journal of Physics: Condensed Matte

Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon

Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on descriptions of central-cell-corrections, which are empirically fitted to match experimental binding energies, or other quantities associated with the global properties of the wave function. Direct approaches to understanding such effects in donor wave functions are of great interest. Here, we apply a comprehensive atomistic theoretical framework to compute scanning tunnelling microscopy (STM) images of subsurface donor wave functions with two central-cell-correction formalisms previously employed in the literature. The comparison between central-cell models based on real-space image features and the Fourier transform profiles indicate that the central-cell effects are visible in the simulated STM images up to ten monolayers below the silicon surface. Our study motivates a future experimental investigation of the central-cell effects via STM imaging technique with potential of fine tuning theoretical models, which could play a vital role in the design of donor-based quantum systems in scalable quantum computer architectures.Comment: Nanoscale 201

Optimising Matrix Product State Simulations of Shor's Algorithm

We detail techniques to optimise high-level classical simulations of Shor's quantum factoring algorithm. Chief among these is to examine the entangling properties of the circuit and to effectively map it across the one-dimensional structure of a matrix product state. Compared to previous approaches whose space requirements depend on $r$, the solution to the underlying order-finding problem of Shor's algorithm, our approach depends on its factors. We performed a matrix product state simulation of a 60-qubit instance of Shor's algorithm that would otherwise be infeasible to complete without an optimised entanglement mapping.Comment: 8 pages, 2 figures, 2 tables. v2 using PDFLaTeX compiler. v3 to include extra references. v4 for publication in Quantu

Scheme for direct measurement of a general two-qubit Hamiltonian

The construction of two-qubit gates appropriate for universal quantum computation is of enormous importance to quantum information processing. Building such gates is dependent on accurate knowledge of the interaction dynamics between two qubit systems. This letter will present a systematic method for reconstructing the full two-qubit interaction Hamiltonian through experimental measures of concurrence. This not only gives a convenient method for constructing two qubit quantum gates, but can also be used to experimentally determine various Hamiltonian parameters in physical systems. We show explicitly how this method can be employed to determine the first and second order spin-orbit corrections to the exchange coupling in quantum dots.Comment: 4 Pages, 1 Figur